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Silicon has been the dominant material for electronic computing for decades, but it is well-known that Moore’s law is long dead. Therefore, a fervent search for (i) new semiconductors that could directly replace silicon or (ii) new architectures with novel materials/devices added onto silicon or (iii) new physics/state-variables or a combination of above has been the subject of much of the electronic materials and devices research of the past 2 decades. This is not possible without fundamental innovation in new electronic materials and devices. Therefore, I will make the case that novel layered two-dimensional (2D) chalcogenide materials and three-dimensional (3D) nitride materials might present interesting avenues to overcome some of the limitations being faced by Silicon hardware. I will present our work on integration of 2D chalcogenide semiconductors with Silicon to realize low-power tunnelling field effect transistors. In particular I will focus on In-Se based 2D semiconductors for this application and extend discussion on them to phase-pure, epitaxial thin-film growth over wafer scales, at temperatures low-enough to be compatible with back end of line (BEOL) processing in Silicon fabs. I will then discuss memory devices from 2D materials when integrated with emerging wurtzite structure ferroelectric nitride materials namely aluminium scandium nitride (AlScN). First, I will present on Ferroelectric Field Effect Transistors (FEFETs) made from 2D materials when integrated with AlScN and make the case for 2D semiconductors in this application. Next I will introduce our work on Ferroelectric Diode (FeD) devices also based on thin AlScN. I will also present how FeDs provide a unique advantage in compute-in-memory (CIM) architectures for efficient storage, search and hardware implementation of neural networks. Finally, I will present ongoing work and opportunities to extend the application of AlScN ferrodiodes into extreme environments, scaling them and integration with SiC electronics. I will end the talk with a broad perspective on the role of novel materials and heterostructures in semiconductor technologies for electronic computing. Co-sponsored by: IEEE North Jersey Section Speaker(s): , Dr. Deep Jariwala Agenda: Event Time: 2:30 PM to 4:00 PM 2:00 PM Refreshments and Networking 2:15 PM Talk by Dr. Deep Jariwala of U Penn Seminar is in Central King Building, Room 116. All Welcome: There is no fee/charge for attending IEEE technical seminar. You don't have to be an IEEE Member to attend. Refreshments are free for all attendees. Please invite your friends and colleagues to take advantage of this Invited Distinguished Lecture. Room: 116, Bldg: Central King Building, 154 Summit Street, Newark, NJ 07102, NJIT, Newark, New Jersey, United States, 07102

Nov 18, EE conference room 6pm Dinner 6:30-7:30PM seminar RSVP link: (https://urldefense.proofpoint.com/v2/url?u=https-3A__forms.gle_Cxe6k9bPodifSPfM8&d=DwMFaQ&c=009klHSCxuh5AI1vNQzSO0KGjl4nbi2Q0M1QLJX9BeE&r=mg7EyKRI_humJCkN7wiXE9HxKVSQI6WRrvIMuePKjQE&m=XySi7HZ-LPu7GSXEHmGmttL1390OQ7tc5SckwHQqBbEyw2D3P_RLvhrIentA28Gv&s=TcHtsE9l1cXLwaIoDq9ApiEeyh73hECkjksRZ35uA7g&e=) RSVPs are required at least two days in advance to access the campus - you'll get instructions over email with details. As the consumer electronics sector continues to grow, and OLEDs are playing an increasingly important role in this space, OLED performance requirements continue to evolve. In this presentation, we will look back on the commercialization of OLEDs and UDC’s groundbreaking contributions to phosphorescent OLED materials and technologies for energy-efficient displays and lighting products. We will also look forward to the future of OLED technologies and present our innovation roadmap for display efficiency, emphasizing new technologies which will enable ultra-low power consumption. Our significant enhancements in efficiency and performance are poised to unlock new applications for OLED technology, thereby expanding the market. Eric Margulies is a Principal Research Scientist at UDC where he works on device engineering, material development, and commercialization of OLED materials. He has worked in this role at UDC for 8 years, prior to which he was a Physical Organic Chemistry PhD student at Northwestern University under the direction of Prof. Michael Wasielewski. In his doctoral research, Eric studied organic exciton dynamics. He has authored 21 peer reviewed publications, and is an inventor on over 35 granted patents. Co-sponsored by SID-MAC, IEEE New York EDS-SSCS joint chapter, and the department of Electrical Engineering at Columbia University. Co-sponsored by: SID-MAC, IEEE New York EDS-SSCS joint chapter, and the department of Electrical Engineering at Columbia University. Room: EE conference room (1300) , 500 W120th Street, New York, New York, United States, 10027

November 2024 LI Section ExCom Meeting Agenda: Call to Order Chair’s Report (Rhonda Green) Vice Chair’s Report (James Martino) Secretary’s Report (Udit Sharma) Treasurer's Report (Sandy Mazzola) Society Reports (Chapter Chair & Vice Chair) Affinity Group Reports (Group Chair & Vice Chair) Committee Reports (Committee Chair, Vice Chair) New Business & Voting Items (All) Action Items (Secretary, All) Closing Remarks and Adjourn (Rhonda Green) Virtual: https://events.vtools.ieee.org/m/445867